A double-recessed 4H-SiC MESFETs with multi-recessed
source/drain drift region was proposed. The multi-recessed drift region is to
reduce channel thickness between gate and drain as well as eliminate gate
depletion layer extension to source/drain. The simulated results showed that
the breakdown voltage and the output power density of the proposed
structure is about 36.5% and 39% larger than that of the published
4H-SiC MESFETs with double-recessed structure, respectively, and yet
maintain almost same saturation drain current characteristics. The cut-off
frequency (fT) and the maximum oscillation frequency (fmax) of the proposed
structure are 12.7 GHz and 35.4 GHz, respectively, which are higher than
that of the double-recessed structure.
کلید واژگان :
4H-SiC, MESFET, double-recessed, multi-recesses, drift region
