Investigation of Different Combinations of CNTFET and MOSFET In the Structure of a Hybrid Ring Oscillator

In this paper, several carbon nanotube field effect (CNTFET) and MOSFET based hybrid ring oscillators are presented. In these designs, both the advantages of high frequency performance without compromising on power consumption and the capabilities of the CNTFET have been used. Studies on a three-stage ring oscillator have shown that the location of inverters based on CNTFET and MOSFET can have a significant effect on the oscillation frequency of a three-stage ring oscillator. Based on the simulations and the results obtained in the technology of 32 nm and the supply voltage of 0.8 V, the oscillation frequency of these designs are in the range of several GHz and in terms of the power delay product (PDP) is in the range of several tens of aJ. PDP of the proposed designs are extremely low compared to up-to-date advanced techniques, which makes these designs very suitable for low power and high frequency applications.

Hybrid Ring Oscillator, Carbon Nanotube Field Effect Transistor (CNTFET), Low Power, Power Delay Product (PDP)