Optimization of CIGS Thin Film Solar Cells via Numerical Simulation.

In this study the performance of CIGS solar cell has been investigated as function of Ga content in absorber layer in order to find optimum absorber material composition. The cell structure based on CIGS compound semiconductor as the absorber layer, indium sulfide as a buffer layer and zinc oxide as a window layer has been simulated using SCAPS simulation software. Furthermore, the cell electrical equivalent circuit is used to obtain some of the cell’s output parameters that are not directly obtained from simulation results. For example parasitic shunt and series resistance. The project is an empirical simulation by using some valid data of some experiments which are focused on material properties. The final simulation results are well defined by comparing them with valid experiments and cell samples.

CIGS compound semiconductor, thin film solar cells, SCAPS-1D , indium sulfide indium sulfide buffer layer, numerical simulation